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| HiPerFETTM Power MOSFETs IXFN 26N90 Single Die MOSFET IXFN 25N90 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr G D VDSS 900 V 900 V ID (cont) 26 A 25 A RDS(on) 0.30 W 0.33 W trr 250 ns 250 ns Preliminary data sheet Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TJ VISOL Md Weight Symbol Test Conditions 1.6 mm (0.63 in) from case for 10 s 50/60 Hz, RMS IISOL 1 mA t = 1 min t=1s Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGS = 1 MW Continuous Transient TC = 25C TC = 25C, pulse width limited by TJM TC = 25C TC = 25C TC = 25C IS IDM, di/dt 100 A/ms, VDD VDSS, TJ 150C, RG = 2 W TC = 25C 26N90 25N90 26N90 25N90 26N90 25N90 S S Maximum Ratings 900 900 20 30 26 25 104 100 26 25 64 3 5 600 -55 ... +150 150 -55 ... +150 2500 3000 V V V V A miniBLOC, SOT-227 B (IXFN) E153432 S G S D A A mJ J V/ns W C C C C V~ V~ Features G = Gate S = Source D = Drain Either Source terminal at miniBLOC can be used as Main or Kelvin Source * International standard package * miniBLOC, with Aluminium nitride isolation * Low RDS (on) HDMOSTM process * Rugged polysilicon gate cell structure * Unclamped Inductive Switching (UIS) rated Mounting torque Terminal connection torque 1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in. 30 g * Low package inductance * Fast intrinsic Rectifier Applications Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 900 3.0 5.0 200 TJ = 25C TJ = 125C 26N90 25N90 100 2 0.30 0.33 V V nA mA mA W W * DC-DC converters * Battery chargers * Switched-mode and resonant-mode power supplies VDSS VGH(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 3 mA VDS = VGS, ID = 8 mA VGS VDS VGS = 20 VDC, VDS = 0 = 0.8 * VDSS =0V * DC choppers * Temperature and lighting controls Advantages VGS = 10 V, ID = 0.5 * ID25 Pulse test, t 300 ms, duty cycle d 2 % * Easy to mount * Space savings * High power density 97526E (10/99) IXYS reserves the right to change limits, test conditions, and dimensions. (c) 2000 IXYS All rights reserved 1-4 IXFN 25N90 IXFN 26N90 Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 18 28 8.7 VGS = 0 V, VDS = 25 V, f = 1 MHz 300 60 VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 RG = 1 W (External) 35 130 24 240 VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 56 107 10.8 375 S nF pF pF ns ns ns ns nC nC nC 0.21 K/W 0.05 K/W M4 screws (4x) supplied Dim. A B C D E F G H J K L M N O P Q R S T U Millimeter Min. Max. 31.50 7.80 4.09 4.09 4.09 14.91 30.12 38.00 11.68 8.92 0.76 12.60 25.15 1.98 4.95 26.54 3.94 4.72 24.59 -0.05 31.88 8.20 4.29 4.29 4.29 15.11 30.30 38.23 12.22 9.60 0.84 12.85 25.42 2.13 5.97 26.90 4.42 4.85 25.07 0.1 Inches Min. Max. 1.240 0.307 0.161 0.161 0.161 0.587 1.186 1.496 0.460 0.351 0.030 0.496 0.990 0.078 0.195 1.045 0.155 0.186 0.968 -0.002 1.255 0.323 0.169 0.169 0.169 0.595 1.193 1.505 0.481 0.378 0.033 0.506 1.001 0.084 0.235 1.059 0.174 0.191 0.987 0.004 miniBLOC, SOT-227 B gfs C 0 iss Coss C rss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK VDS = 10 V; ID = 0.5 * ID25, pulse test 800 1000 Source-Drain Diode Symbol IS ISM VSD t rr QRM IRM Test Conditions VGS = 0 V Repetitive; pulse width limited by TJM Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 26N90 25N90 26N90 25N90 26 25 104 100 1.5 250 1.4 10 A A V ns mC A IF = IS, VGS = 0 V, Pulse test, t 300 ms, duty cycle d 2 % IF = IS, -di/dt = 100 A/ms, VR = 100 V (c) 2000 IXYS All rights reserved IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 2-4 IXFN 25N90 IXFN 26N90 Figure 1. Output Characteristics at 25OC 20 TJ = 25C VGS = 9V 8V 7V Figure 2. Extended Output Characteristics at 125OC 50 40 TJ = 25C VGS = 9V 8V 7V 6V 15 ID - Amperes ID - Amperes 6V 5V 30 20 5V 10 5 4V 10 4V 0 0 0 2 4 6 8 10 0 4 8 12 16 20 VDS - Volts VCE - Volts Figure 3. RDS(on) normalized to 0.5 ID25 value vs. ID 30 25 TJ = 125C VGS = 9V 8V 7V Figure 4. Admittance Curves 30 25 6V ID - Amperes ID - Amperes 20 15 10 5 0 5V 20 TJ = 125OC 15 10 5 0 TJ = 25OC 4V 0 5 10 15 20 25 2 3 4 5 6 7 VDS - Volts VGS - Volts Figure 5. RDS(on) normalized to 0.5 ID25 value vs. ID 2.4 2.2 RDS(ON) - Normalized RDS(ON) - Normalized 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0 10 20 30 40 50 TJ = 25C TJ = 125C VGS = 10V Figure 6. RDS(on) normalized to 0.5 ID25 value vs. TJ 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 25 50 75 100 125 150 ID = 13A VGS = 10V ID = 26A ID - Amperes TJ - Degrees C (c) 2000 IXYS All rights reserved 3-4 IXFN 25N90 IXFN 26N90 Figure 7. Gate Charge 15 12 VDS = 500 V ID = 13 A IG = 10 mA Figure 8. Capacitance Curves 20000 10000 Ciss Capacitance - pF f = 1MHz Coss VGS - Volts 9 6 3 0 1000 Crss 100 0 50 100 150 200 250 300 350 0 5 10 15 20 25 30 35 40 Gate Charge - nC VDS - Volts Figure 9. Forward Voltage Drop of the Intrinsic Diode Capacitance Curves 50 45 40 35 Figure10. Drain Current vs. Case Temperature 30 25 IXFN25N90 IXFN26N90 ID - Amperes 30 25 20 15 10 5 0 TJ = 125oC TJ = 25oC ID - Amperes 1.5 20 15 10 5 0 -50 0.0 0.3 0.6 0.9 1.2 -25 0 25 50 75 100 125 150 VSD - Volts Case Temperatue - oC Figure 11. Transient Thermal Resistance 0. 300 0.100 R(th)JC - K/W 0.010 0.001 10-4 10-3 10-2 10-1 100 101 Pulse Width - Seconds (c) 2000 IXYS All rights reserved 4-4 |
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